Burst CV (< 2μs) Measurement System for BTI Analysis of MOS Capacitors

The Bias Temperature Instability (BTI) measurement for two terminal capacitive devices is a challenge due to the unavailability of a fast measurement system that can measure the entire capacitance-voltage (CV) curve without disturbing the defect state of the devices. We demonstrate a Burst CV (BCV) measurement system capable of measuring the entire CV curve in less than 2 us with the data sampling rate of 0.32 ns and having a sweep range of ±10 V. The system has been used to measure the BTI characteristics of an Aluminium Oxide Phosphate (ALPO) based two-terminal metal oxide semiconductor capacitor (MOScap) device. The device demonstrates power law degradation of oxide with an exponent ranging from 0.24 to 0.31, indicating its potential to measure the reliability of semiconductor devices.