Impact of Non-ideal Reliability Characteristics of SiOx p-Bit for Complex Optimization Problem Solver

SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> threshold switching (TS) devices generate periodic output voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{V}_{\text{out}})$</tex> spikes for a given input voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{V}_{\text{in}})$</tex> pulse. By introducing Ti scavenging layers to induce a variability component in the SiOx film, the number of spikes corresponding to the probability begins to be elaborately tuned in a sigmoid manner as a function of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{V}_{\text{in}}$</tex> amplitude. Thus, Ti/SiOx/Ti TS device can serve as probabilistic bit (p-Bit), which play an important role in solving complex optimization problems (COPs). We investigate the impact of the non-ideal SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>p-Bit response on the COP by considering classified scenarios based on the measurement results.