Impact of Hot-Carrier Degradation on Flicker Noise (1/f) in 45-nm PD-SOI Floating-Body NFETs

In this paper, the influence of hot-carrier degradation (HCD) on flicker noise (1/f) is presented in 45-nm RFSOI floating-body NFETs at room temperature. The pre-and post-HCD effects of channel length variation on 1/f noise in linear region is analyzed. While HCD is more pronounced in short-channel NFETs under the same drain electric field, the normalized 1/f noise post-HCD shows no significant change compared to long-channel devices. The study further investigates the variations in normalized noise before and after stress between these devices, using time slope exponent extraction, frequency exponent analysis and volume trap density extraction to explain this behavior.