A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic Temperatures
Random telegraph noise (RTN) of CMOS drain current at cryogenic temperatures was characterized using addressable transistor matrix arrays. Capture/emission time constants of selected devices were precisely measured varying bias condition and temperature, and it was concluded that the results cannot be explained by commonly adopted detailed balance theory. A model based on non-equilibrium charge transfer is proposed, which would explain the experimental results, while keeping the basic framework of NMP theory. The results suggest that applicability of the detailed balance theory at cryogenic temperatures needs to be reexamined.
Authors
- Kiyoshi Takeuchi (ORCID: https://orcid.org/0000-0002-8392-1029)
- Takuya Saraya (ORCID: https://orcid.org/0000-0002-3796-7747)
- Shinichi Takagi (ORCID: https://orcid.org/0000-0002-5601-2604)
- Hiroshi Oka (ORCID: https://orcid.org/0000-0002-6571-3461)
- T. Mizutani (ORCID: https://orcid.org/0000-0002-2358-3945)
- Masaharu Kobayashi (ORCID: https://orcid.org/0000-0002-7945-6136)
- Takahiro Mori (ORCID: https://orcid.org/0000-0001-5899-1060)
- Toshiro Hiramoto (ORCID: https://orcid.org/0000-0001-9469-2631)
Institutions
- National Institute of Advanced Industrial Science and Technology (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983654
- Citations
- 2
- Primary Topic
- Ultrasonics and Acoustic Wave Propagation
- Type
- article
- Field-Weighted Citation Impact
- 1.73