Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications
De-trapping mechanisms and their dependence on applied bias have been studied in RF buffer-free AIGaN/GaN HEMTs on SiC. De-trapping time decreases by several orders of magnitude when the device is biased. The role of electroluminescence radiation emitted by the device in promoting in-situ trap photoionization is discussed.
Authors
- Enrico Zanoni (ORCID: https://orcid.org/0000-0001-7349-9656)
- Manuel Fregolent (ORCID: https://orcid.org/0000-0003-0801-2260)
- Fabiana Rampazzo (ORCID: https://orcid.org/0000-0002-2418-4831)
- Matteo Meneghini (ORCID: https://orcid.org/0000-0003-2421-505X)
- Mirco Boito (ORCID: https://orcid.org/0000-0002-8920-1348)
- Carlo De Santi (ORCID: https://orcid.org/0000-0001-6064-077X)
- Marco Saro (ORCID: https://orcid.org/0000-0002-0422-2300)
- Francesco De Pieri (ORCID: https://orcid.org/0009-0002-4498-3187)
- Andrea Carlotto
- Gaudenzio Meneghesso (ORCID: https://orcid.org/0000-0002-6715-4827)
Institutions
- University of Padua (IT)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983862
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Office of Naval Research