Reliability and Integration Challenges Underlying New Material Introduction into Memory Technology (Invited)

Only by understanding the physical mechanism underlying lifetime of materials and devices we can engineer novel memories with superior reliability. Guided by this principle, we will review the reliability challenges and underlying physics of 3D- and 3D-stackable memory cells. Predominantly we will analyze reliability of DRAM, 3D NAND and future 3D DRAM. A particular focus will be on addressing the reliability aspect of integrating new materials (e.g., oxide-semiconductors and ferroelectrics) into such complex architectures and the challenges they must overcome before reaching high-volume manufacturing.