Multiscale Modeling and Calibration of Hot-Carrier Stress Degradation in SiGe DRAM Peripheral MOSFETs
A new multiscale simulation flow for hot-carrier stress (HCS) degradation that combines ab-initio, Spherical Harmonic Expansion of Boltzmann transport equation and TCAD simulations is developed and applied to DRAM peripheral MOSFETs. Automatic calibration strategies for the TCAD model are also implemented. The simulations are validated against experimental data from Si/SiGe n- and p-MOSFETs, thus giving insights into the physical mechanisms responsible for HCS degradation and showing its efficiency to rapidly design reliable DRAM peripheral transistors.
Authors
- Nikolas Zographos
- Youngseok Lee (ORCID: https://orcid.org/0000-0003-0900-166X)
- Luca Silvestri
- Xi–Wei Lin (ORCID: https://orcid.org/0000-0003-0098-0638)
- Seung‐Woo Son (ORCID: https://orcid.org/0000-0003-2244-0376)
- Ho‐Jang Kwon (ORCID: https://orcid.org/0000-0003-3029-5674)
- W.H. Yim
- Soo‐Min Jin (ORCID: https://orcid.org/0000-0002-6283-9958)
- Hyunjin Shim (ORCID: https://orcid.org/0000-0002-4179-2628)
- Wonwoo Jeong (ORCID: https://orcid.org/0000-0002-9527-5976)
- Nayoung Kim (ORCID: https://orcid.org/0000-0002-9397-0406)
- Do Hoon Oh (ORCID: https://orcid.org/0000-0002-4296-0144)
- L. Sponton
Institutions
- Synopsys (Switzerland) (CH)
- SK Group (South Korea) (KR)
- Synopsys (United States) (US)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983620
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00