A new S-parameter Deep Level Transient Spectroscopy (S-DLTS) Method: Development and Qualification

Most devices are affected by non-idealities which are often associated with defects or traps within the device. To counteract these non-idealities, work is done to identify, quantify, and mitigate these traps. Current techniques are generally used on simplified test structures to understand the in-situ grown traps, although, traps can arise from the processing steps for devices. Therefore, it is best to measure traps in the final devices. A new technique that addresses this need is proposed: Sparameter Deep Level Transient Spectroscopy (S-DLTS). With this technique, traps can be measured and analyzed from any device structure or type and from ultra shallow to deep traps, allowing for a deeper understanding of a device performance and further maturation and improvement of the next generation of materials and devices. This new technique has been used and qualified using GaN MISCap diodes.