MXene Quantum Dot/Perovskite-based Memristor with Tunable Switching Characteristics for Artificial Intelligence Technology
In this study, Ag/Nb2C QDs/MAPbI3/ITO memristor based on MAPbI3 perovskite materials combined with MXene quantum dots (Nb2C QDs) as a resistive switching layer was successfully prepared, which realized the systematic memristor function under certain electrical injection. The relevant results show that the memristor device has threshold switching (TS) characteristics at low compliant current (Icc) and resistance switching (RS) characteristics at high Icc. Besides, the device achieves a low SET voltage (~0.85 V), a high on/off ratio (~10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>), and an ultra-steep switching slope (~0.231 mY/dec). These results indicate that this memristor device has great application potential in artificial intelligence technology with low power consumption and high computing efficiency.
Authors
- Ertao Hu (ORCID: https://orcid.org/0000-0002-7659-9422)
- Weijia Zhou (ORCID: https://orcid.org/0000-0003-4339-0435)
- Pengcheng Zhou (ORCID: https://orcid.org/0000-0001-5787-5420)
- Junyuan Chen (ORCID: https://orcid.org/0000-0002-4973-7244)
- Yi Liu (ORCID: https://orcid.org/0000-0002-5333-7163)
- Youshan Gui
- Xiaoyan Liu (ORCID: https://orcid.org/0000-0003-2408-0108)
- Hao Zhang (ORCID: https://orcid.org/0000-0002-2373-1100)
- Lei Wang (ORCID: https://orcid.org/0000-0002-4482-8956)
- Tenglong Guo
Institutions
- Nanjing University of Posts and Telecommunications (CN)
Publication Details
- Published
- 2025-02-28
- DOI
- https://doi.org/10.1109/iccece65250.2025.10985335
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00