Ka-Band On-Chip Broad Stopband Bandpass Filters Based on GaN-on-Silicon

We propose a broad stopband on-chip bandpass filter (BPF) based on GaN-on-Silicon. The filter extends the ground plane between the resonators, and a U-shaped feed to form a band stop, which forms a transmission zero at the upper frequency for faster attenuation. The measurements show that the filter has a broad stopband with S<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> less than −15 dB from 30.4 to 110 GHz. The 3 dB bandwidth is 12.1%, and the S21 bandwidth greater than −15 dB is 23.7%. The quality factor is33.7 which is higher than the existing literature. This proposed filter has a good stopband attenuation rate with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.087\times 0.103~\lambda _{{g}2}$</tex-math> </inline-formula> (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.662\times 0.814$</tex-math> </inline-formula> mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>) chip area.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-05-15
DOI
https://doi.org/10.1109/lmwt.2025.3566030
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

Ka-Band On-Chip Broad Stopband Bandpass Filters Based on GaN-on-Silicon

Hong Wang, Xiaoyi Liu, Weiyuan Wang, Guanghao Guan et al.
1 citations
IEEE Microwave and Wireless Technology Letters
GaN-based semiconductor devices and materials
1.26
article

Ka-Band On-Chip Broad Stopband Bandpass Filters Based on GaN-on-Silicon

Hong Wang, Xiaoyi Liu, Weiyuan Wang, Guanghao Guan, Yiming Xing
article en
1 citations

Abstract

We propose a broad stopband on-chip bandpass filter (BPF) based on GaN-on-Silicon. The filter extends the ground plane between the resonators, and a U-shaped feed to form a band stop, which forms a transmission zero at the upper frequency for faster attenuation. The measurements show that the filter has a broad stopband with S<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> less than −15 dB from 30.4 to 110 GHz. The 3 dB bandwidth is 12.1%, and the S21 bandwidth greater than −15 dB is 23.7%. The quality factor is33.7 which is higher than the existing literature. This proposed filter has a good stopband attenuation rate with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.087\times 0.103~\lambda _{{g}2}$</tex-math> </inline-formula> (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.662\times 0.814$</tex-math> </inline-formula> mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>) chip area.

IEEE Microwave and Wireless Technology LettersVol. 35(8)
South China University of Technology (CN)
Science and Technology Development Plan of Shandong Province, Science and Technology Planning Project of Guangdong Province
Openalex Percentile: Top 21%
GaN-based semiconductor devices and materials
1.26
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Ka-Band On-Chip Broad Stopband Bandpass Filters Based on GaN-on-Silicon — Hong Wang, Xiaoyi Liu, et al. · IEEE Microwave and Wireless Technology Letters (2025) | TGRS Research Map | TGRS