Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain
The ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj), attributable to the increased electrical field at the source edge. As a result, the electron injection velocity (vinj) of 1.77×107 cm/s has been realized at the lateral electrical field of 1 MV/cm for the SOI nMOSFETs with a S/D Schottky barrier height of 0.71 eV. These results suggest that the metal S/D structure is feasible to boost the performance of ultimately scaled SOI devices.
Authors
- Junkang Li (ORCID: https://orcid.org/0000-0003-3812-3842)
- W. Schwarzenbach (ORCID: https://orcid.org/0000-0003-2821-0854)
- Dawei Gao (ORCID: https://orcid.org/0009-0002-7786-1506)
- John Robertson (ORCID: https://orcid.org/0000-0001-6558-528X)
- Bich-Yen Nguyen (ORCID: https://orcid.org/0000-0003-4347-4583)
- Xinyi Zhang (ORCID: https://orcid.org/0000-0003-4695-3731)
- Rui Zhang (ORCID: https://orcid.org/0000-0002-5433-7616)
- Jing Yan
- Yi Jiang
- Rui Su (ORCID: https://orcid.org/0009-0004-8126-0679)
Institutions
- Soitec (France) (FR)
- Zhejiang University (CN)
Publication Details
- Journal
- IEEE Journal of the Electron Devices Society
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/jeds.2025.3569242
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China