Methodology for Parasitic Elements Extraction of SiC Power Module Based on N-Port Measurement

This paper presents a measurement-based methodology focused on the parasitic extraction of RL elements involved in the commutation power loop of SiC-based power modules. It can be seen as a black/grey-box model that considers a set of Scattering-parameters (S-Parameters) measurements for a given number of ports (N) externally available in a power module under test. The proposed approach allows us to build, in some hours, a model intended to be a behavior representation as close as possible to the physics of the power module. Uncertainties and errors of measurement are managed by optimization regression algorithm based on least-square using the Gauss-Newton-Raphson (GNR) method. Experimental results using a SiC-based power module with different samples are presented for validation purposes.