An area-efficient memristor-based trimming circuit for current reference with temperature coefficient optimization capability

With the widespread use of analogue circuits, current reference (CR) trimming has become an increasingly important issue. Therefore, finding a reliable and area-efficient trimming method becomes more and more critical. In this paper, a novel area-efficient memristor-based trimming circuit for current reference (CR) with temperature coefficient optimization capability is proposed. The proposed trimming core circuit uses only the source-degraded current mirror embedded in the memristors, thus achieving a significant area reduction.The circuit produces an output of approximately 5.2 μA, and test results show a calibrated output temperature coefficient (TC) of less than 75 ppm/°C over the temperature range of -20°C to 120°C, with a linearity of 4.3% /V over 2.2 to 4 V. The circuit implementation uses 0.18-μm CMOS technology. The layout area is less than 0.0016 mm2, representing average area savings of 84.3% over the current state of the art in trimming circuits.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-05-15
DOI
https://doi.org/10.1587/elex.22.20250210
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.73

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An area-efficient memristor-based trimming circuit for current reference with temperature coefficient optimization capability

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article

An area-efficient memristor-based trimming circuit for current reference with temperature coefficient optimization capability

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article en
1 citations

Abstract

With the widespread use of analogue circuits, current reference (CR) trimming has become an increasingly important issue. Therefore, finding a reliable and area-efficient trimming method becomes more and more critical. In this paper, a novel area-efficient memristor-based trimming circuit for current reference (CR) with temperature coefficient optimization capability is proposed. The proposed trimming core circuit uses only the source-degraded current mirror embedded in the memristors, thus achieving a significant area reduction.The circuit produces an output of approximately 5.2 μA, and test results show a calibrated output temperature coefficient (TC) of less than 75 ppm/°C over the temperature range of -20°C to 120°C, with a linearity of 4.3% /V over 2.2 to 4 V. The circuit implementation uses 0.18-μm CMOS technology. The layout area is less than 0.0016 mm2, representing average area savings of 84.3% over the current state of the art in trimming circuits.

IEICE Electronics ExpressVol. 22(12)
Chinese Academy of Sciences (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 28%
Advanced Memory and Neural Computing
0.73
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