An area-efficient memristor-based trimming circuit for current reference with temperature coefficient optimization capability
With the widespread use of analogue circuits, current reference (CR) trimming has become an increasingly important issue. Therefore, finding a reliable and area-efficient trimming method becomes more and more critical. In this paper, a novel area-efficient memristor-based trimming circuit for current reference (CR) with temperature coefficient optimization capability is proposed. The proposed trimming core circuit uses only the source-degraded current mirror embedded in the memristors, thus achieving a significant area reduction.The circuit produces an output of approximately 5.2 μA, and test results show a calibrated output temperature coefficient (TC) of less than 75 ppm/°C over the temperature range of -20°C to 120°C, with a linearity of 4.3% /V over 2.2 to 4 V. The circuit implementation uses 0.18-μm CMOS technology. The layout area is less than 0.0016 mm2, representing average area savings of 84.3% over the current state of the art in trimming circuits.
Authors
- G. Chen (ORCID: https://orcid.org/0000-0003-3058-0547)
- Huaxiang Lu (ORCID: https://orcid.org/0000-0002-5928-9705)
- Haoyu Li (ORCID: https://orcid.org/0000-0002-0275-4944)
- Zhigang Li (ORCID: https://orcid.org/0000-0003-3823-9845)
- Xiangrui Li (ORCID: https://orcid.org/0000-0002-7143-6827)
- Yi‐Hao Chen (ORCID: https://orcid.org/0000-0002-9977-7180)
- Tianhang Liang
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- IEICE Electronics Express
- Published
- 2025-05-15
- DOI
- https://doi.org/10.1587/elex.22.20250210
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China