Electrical and Optical Properties of ZnO:MgF2 with Ag Thin Film for Optoelectronic Sensor Application
High-purity (99.99%) silver thin-film coatings were deposited on glass substrates using a DC magnetron sputtering system.Double-layer transparent conductive films were then prepared by depositing 97:3 at% zinc oxide-doped magnesium fluoride (ZnO:MgF 2 ) films on the silver coatings.The films were annealed at temperatures in the range of 200-500 under vacuum to promote structural rearrangement and reduce internal defects.The thickness, electrical properties, optical properties, surface characteristics, and figures of merit of the various films were examined and compared.The results showed that the double-layer film annealed at the highest temperature of 500 had the lowest resistivity of 1.68 10 -5 -cm.By contrast, the maximum optical transmittance (67.13%) and best quality factor (2.45 10 -3 -1 ) were observed in the film annealed at the lowest temperature of 200 .
Authors
- Sigit Tri Wicaksono (ORCID: https://orcid.org/0000-0003-3346-0989)
- Tao‐Hsing Chen (ORCID: https://orcid.org/0000-0002-5433-1812)
- Shao-Tsen Wang
- C. Q. Yu (ORCID: https://orcid.org/0009-0006-0712-3101)
Publication Details
- Journal
- Sensors and Materials
- Published
- 2025-05-15
- DOI
- https://doi.org/10.18494/sam5316
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Cheng Kung University
- National Science and Technology Council