Effects of Annealing on Properties of ITO:MgO/Ag Dual-layer Films for Sensor Material Applications

In this study, we investigated the optical and electrical properties of ITO:MgO/Ag dual-layer transparent conducting films (with an atomic ratio of 97:3 at.%) annealed at different temperatures.Annealing was conducted in a vacuum utilizing thermal energy to rearrange the crystalline structure of the films, thus enabling atomic substitution, and to address internal defects.The optical and electrical properties of the dual-layer films were compared before and after annealing, revealing that the lowest resistivity of 2.92 10 -5 cm was in the unannealed state, the average transmittance was 58.97% at an annealing temperature of 500 , and the optimal figure of merit (FOM) was 7.71 10 -4 after annealing at a temperature of 300 .