Potential for radiation detector based on Si, InGaP, CIGS, and perovskite solar cells
Abstract Solar cells have become widely available consumer products due to their cost-effectiveness and high-quality performance. These devices also exhibit significant potential for applications in other fields, such as semiconductor sensors and energy conversion devices, and have been actively studied in these contexts. In this study, we focus on the potential of various solar cell materials, including Si, InGaP, CIGS, and hybrid-organic-inorganic perovskite, to function as radiation detectors. The study investigates their detection characteristics under exposure to gamma rays and seem to be depending on their absorption layer thickness and minority carrier diffusion length. Additionally, InGaP cells are investigated for their responsiveness to various types of radiation, not only gamma rays but also more challenging radiation types like electron beams and ion beams. The results demonstrate the successful analysis of radiation dose rates by measuring the current generated without depending on the kind of radiation.
Authors
- Mitsuru Imaizumi (ORCID: https://orcid.org/0000-0001-5456-1696)
- Yukiko Kamikawa (ORCID: https://orcid.org/0000-0002-4605-4165)
- Yasuki Okuno (ORCID: https://orcid.org/0000-0002-8569-4077)
- Tomohiro Kobayashi (ORCID: https://orcid.org/0000-0002-4554-6731)
- Yoshié Otake (ORCID: https://orcid.org/0000-0002-1959-1934)
- Sho Otsuka (ORCID: https://orcid.org/0000-0003-1179-0987)
- Tamotsu Okamoto
Institutions
- Tohoku University (JP)
- Kinjo University (JP)
- National Institute of Technology, Kisarazu College (JP)
- RIKEN (JP)
- RIKEN Advanced Science Institute (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-05-15
- DOI
- https://doi.org/10.35848/1347-4065/add941
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00