Fractional thermophotovoltaic with spacetime nonlocality model for a rotating semiconductor solid sphere

Spinning semiconductors are essential for advanced technologies such as thermoelectric devices, plasma processes for etching and deposition, and satellite navigation systems. However, their complex responses to heat, mechanical stress, and rotation remain inadequately captured by existing models, motivating this research to develop a more accurate framework for understanding these materials’ behavior, particularly under dynamic conditions. This study introduces a novel mathematical model to analyze plasma interactions, heat flow, and elastic responses in a rotating semiconductor sphere, such as silicon, subjected to thermal shock with a traction-free surface. The model builds on the Green-Naghdi Type III framework by incorporating a relaxation factor and the Moore-Gibson-Thompson equation for improved heat conduction modeling. Additionally, it employs spacetime nonlocality to account for size-dependent and memory effects, and the Atangana-Baleanu fractional derivative to capture intricate dynamic behavior. By solving the model using the Laplace transform technique, the research reveals the impact of rotation speed, nonlocality, and fractional derivatives on temperature, displacement, stress, and charge carrier distribution. Key contributions include the development of an advanced model that surpasses traditional approaches, the demonstration of smoother thermal gradients, reduced deformation, and more uniform stress and charge distributions for enhanced thermal management and mechanical stability. These findings offer practical insights for designing reliable semiconductor devices in nanoelectronics, optoelectronics, and microelectromechanical systems, addressing critical gaps in current research and advancing semiconductor technology.