Ni/ZnO Schottky photodiodes for high-performance ultraviolet detection: Influence of precursor molarity on structural and electrical properties

In this study, ZnO thin films were spin coated on FTO coated glass substrates with varying precursor molarities (0.3 M, 0.5 M, 0.7 M, and 0.9 M). The impact of molarity on the structural, morphological, optical, and electrical properties of the films was comprehensively investigated. X-ray diffraction (XRD) patterns confirmed the hexagonal wurtzite structure of the films, with optimal crystallite size and reduced dislocation density for 0.7 M films. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed uniform film growth with roughness values ranging from 4.6 nm to 9.2 nm. UV-visible spectroscopy showed an absorption edge in the near UV region. Schottky diodes were fabricated using Ni as the top contact. The I-V characteristics showed non-linear behaviour with a rectification of 2 orders for 0.5 M and 0.7 M films. The photoresponse studies indicated significant photocurrent enhancement under UV illumination, with the 0.7 M sample exhibiting a responsivity of 3.5 A/W and detectivity of Jones. Transient response analysis demonstrated fast switching behaviour with rise and decay times of approximately 3 and 7 seconds, respectively. • Investigates the effect of precursor molarity (0.3 M, 0.5 M, 0.7 M, and 0.9 M) on ZnO thin-film properties and device performance. • ZnO thin films exhibit optimal crystallinity and reduced defects at 0.7 M, confirmed by XRD, SEM, and AFM analysis. • Ni/ZnO Schottky diodes demonstrate non-linear rectification with a two-order magnitude improvement in 0.5 M and 0.7 M samples. • The 0.7 M sample exhibits outstanding responsivity (3.5 A/W) and detectivity (2 × 10 11 Jones) under UV illumination. • Demonstrates rapid switching behavior with rise and decay times of approximately 3 s and 7 s, respectively. • Ni is proposed as a viable alternative to expensive metals (Au, Pt, Ag) for Schottky contacts in ZnO-based UV photodetectors.

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Publication Details

Journal
Optical Materials
Published
2025-05-15
DOI
https://doi.org/10.1016/j.optmat.2025.117160
Citations
5
Primary Topic
Gas Sensing Nanomaterials and Sensors
Type
article
Field-Weighted Citation Impact
3.65

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article

Ni/ZnO Schottky photodiodes for high-performance ultraviolet detection: Influence of precursor molarity on structural and electrical properties

Gowrish K. Rao, Swati Pujar
5 citations
Optical Materials
Gas Sensing Nanomaterials and Sensors
3.65
article

Ni/ZnO Schottky photodiodes for high-performance ultraviolet detection: Influence of precursor molarity on structural and electrical properties

Gowrish K. Rao, Swati Pujar
article en
5 citations

Abstract

In this study, ZnO thin films were spin coated on FTO coated glass substrates with varying precursor molarities (0.3 M, 0.5 M, 0.7 M, and 0.9 M). The impact of molarity on the structural, morphological, optical, and electrical properties of the films was comprehensively investigated. X-ray diffraction (XRD) patterns confirmed the hexagonal wurtzite structure of the films, with optimal crystallite size and reduced dislocation density for 0.7 M films. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed uniform film growth with roughness values ranging from 4.6 nm to 9.2 nm. UV-visible spectroscopy showed an absorption edge in the near UV region. Schottky diodes were fabricated using Ni as the top contact. The I-V characteristics showed non-linear behaviour with a rectification of 2 orders for 0.5 M and 0.7 M films. The photoresponse studies indicated significant photocurrent enhancement under UV illumination, with the 0.7 M sample exhibiting a responsivity of 3.5 A/W and detectivity of Jones. Transient response analysis demonstrated fast switching behaviour with rise and decay times of approximately 3 and 7 seconds, respectively. • Investigates the effect of precursor molarity (0.3 M, 0.5 M, 0.7 M, and 0.9 M) on ZnO thin-film properties and device performance. • ZnO thin films exhibit optimal crystallinity and reduced defects at 0.7 M, confirmed by XRD, SEM, and AFM analysis. • Ni/ZnO Schottky diodes demonstrate non-linear rectification with a two-order magnitude improvement in 0.5 M and 0.7 M samples. • The 0.7 M sample exhibits outstanding responsivity (3.5 A/W) and detectivity (2 × 10 11 Jones) under UV illumination. • Demonstrates rapid switching behavior with rise and decay times of approximately 3 s and 7 s, respectively. • Ni is proposed as a viable alternative to expensive metals (Au, Pt, Ag) for Schottky contacts in ZnO-based UV photodetectors.

Optical MaterialsVol. 165
Manipal Academy of Higher Education (IN)
Manipal Academy of Higher Education
Affordable and clean energy
Openalex Percentile: Top 7%
Gas Sensing Nanomaterials and Sensors
3.65
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