Stabilization of top-gate p-SnO transistors <i>via</i> ultrathin Al<sub>2</sub>O<sub>3</sub> interlayers for hysteresis-free operation
Hysteresis-free and stable operation achieved in top-gate SnO TFTs by inserting an Al 2 O 3 interlayer that protects the surface of the metastable SnO channel.
Authors
- Inhong Hwang (ORCID: https://orcid.org/0000-0001-9567-6967)
- Jae‐Yoon Shim (ORCID: https://orcid.org/0000-0003-1881-8436)
- Minki Choe
- Jae Min Jung (ORCID: https://orcid.org/0000-0003-0819-7226)
- Sung Ki Lee (ORCID: https://orcid.org/0000-0002-2989-4787)
- Seong Keun Kim (ORCID: https://orcid.org/0000-0001-8712-7167)
- Noh‐Hwal Park
- Taek‐Mo Chung (ORCID: https://orcid.org/0000-0002-5169-2671)
- Seung Ho Ryu (ORCID: https://orcid.org/0000-0003-1312-6836)
- In-Hwan Baek (ORCID: https://orcid.org/0000-0002-7201-3914)
- Jihoon Jeon
Institutions
- Inha University (KR)
- Korea University (KR)
- Korea Research Institute of Chemical Technology (KR)
- Korea Institute of Science and Technology (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00399g
- Citations
- 7
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 5.11
Funders
- Ministry of Education
- Ministry of Trade, Industry and Energy
- Ministry of Science and ICT, South Korea