Epitaxial growth of a high-quality GaN/AlN heterostructure for the development of an AlN-back barrier high-electron-mobility-transistor
Cross-sectional bright field TEM images of the GaN/AlN heterojunction with a 2D-GaN only channel layer (a, b) and 3D/2D GaN channel layer (c, d). For the proposed 3D/2D structure, dislocations are primarily located in the 3D-GaN layer.
Authors
- Qiushuang Chen
- Ge Gao (ORCID: https://orcid.org/0000-0003-3328-2879)
- Meng Cao (ORCID: https://orcid.org/0000-0002-1286-2885)
- Jie Lin (ORCID: https://orcid.org/0009-0002-5653-8830)
- Lixia Chen (ORCID: https://orcid.org/0000-0003-2196-1428)
- Fang Ye (ORCID: https://orcid.org/0000-0001-8507-0734)
- Sitong Chen (ORCID: https://orcid.org/0000-0002-5159-7957)
- Wei Guo (ORCID: https://orcid.org/0000-0002-2716-553X)
Institutions
- Shanghai University (CN)
- Chinese Academy of Sciences (CN)
- Shanghai Zhangjiang Laboratory (CN)
- Ningbo Institute of Industrial Technology (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00205b
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 3.77