Enhancing selectivity in area-selective atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on Cu using N<sub>2</sub> co-flow
The selectivity of Al 2 O 3 during area-selective atomic layer deposition on a self-assembled monolayer was significantly enhanced by the simple introduction of N 2 co-flow during the trimethylaluminum injection step.
Authors
- Pil J. Yoo (ORCID: https://orcid.org/0000-0002-5499-6566)
- Hyoungsub Kim (ORCID: https://orcid.org/0000-0003-3549-4250)
- Youjin Cho
- Sungwook Hong (ORCID: https://orcid.org/0000-0001-7148-838X)
- Yong-Woo Choi (ORCID: https://orcid.org/0000-0001-9147-4612)
- Andreas Klipp
- Changyu Park
- Sang‐Jun Lee (ORCID: https://orcid.org/0000-0002-8199-3993)
- Hana Lee (ORCID: https://orcid.org/0009-0004-6372-9568)
- Hyeji Kim (ORCID: https://orcid.org/0000-0002-8318-1868)
- Seong Woo Jeong
Institutions
- Ansan University (KR)
- BASF (Germany) (DE)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01083g
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46