A Comprehensive Study on the Polarization, Reliability, and Switching Dynamics of Helium Ion-Bombardment HfZrO<i></i> Ferroelectric Films
We have successfully demonstrated improved performance and reliability in ferroelectric (FE) HfZrO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> (HZO) films through helium ion (He<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman>+</sup>) implantation. The implanted HZO capacitors exhibit a reduced coercive field (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>c</roman></sub>), faster switching speed, and enhanced endurance with wake-up/fatigue-free characteristics. Additionally, the physical origin of the He<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman>+</sup> implantation stabilizes oxygen vacancies (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>O</roman></sub>), ensuring a uniform <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>O</roman></sub> and trap distribution and preventing further <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>O</roman></sub> generation during cycling. This study is helpful for understanding and optimizing the HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>-based FE films for nonvolatile memory applications.
Authors
- Xiao Yu (ORCID: https://orcid.org/0000-0001-8769-521X)
- Huan Liu (ORCID: https://orcid.org/0000-0002-2217-0591)
- Ran Cheng (ORCID: https://orcid.org/0000-0001-6143-7714)
- Chengji Jin (ORCID: https://orcid.org/0000-0002-8517-459X)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Peiyuan Du
- Mengnan Ke (ORCID: https://orcid.org/0000-0001-8235-9559)
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Di Wang (ORCID: https://orcid.org/0000-0002-2500-2913)
- Bing Chen (ORCID: https://orcid.org/0000-0001-5284-8618)
- Hongrui Zhang (ORCID: https://orcid.org/0009-0006-0920-2452)
- Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
- Yian Ding
- Dongya Li
Institutions
- Xidian University (CN)
- Yokohama National University (JP)
- Zhejiang University (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-05-14
- DOI
- https://doi.org/10.1109/ted.2025.3566357
- Citations
- 2
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities