Research and Characteristic Analysis of MOSFET Short Channel Effect Based on Simulation

This study focuses on the short-channel effect of metal-oxide-semiconductor field-effect transistors (MOSFETs). It begins by outlining the development history of MOS transistors, which, as the cornerstone of integrated circuit technology, have undergone a long process from concept to technological maturity. With the advancement of integrated circuit manufacturing processes, the channel length of MOSFETs has been reduced to the nanometer scale, leading to the emergence of the short-channel effect. The paper then delves into the principles of the short-channel effect, including mechanisms such as threshold voltage reduction, increased drain current, and decreased transconductance. Experiments were conducted by designing NMOS transistors with different channel lengths (100nm - 500nm), and transfer characteristic curves were plotted and analyzed. Additionally, Sentaurus software was used to simulate the electrical characteristics of MOSFETs with different channel lengths: transfer characteristics, potential distribution, and electric field distribution. The results show that long-channel devices have strong carrier control ability, high threshold voltage, low power consumption, and good stability; short-channel devices exhibit reduced threshold voltage, increased drain current, intensified channel length modulation effect, and degraded switching performance. The research conclusions provide theoretical and data support for addressing the short-channel effect in integrated circuit design.