A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices
The conductance drift in HfO 2 -based memristors is a critical reliability concern that impacts in their application in non-volatile memory and neuromorphic computing integrated circuits. In this work we present a comprehensive statistical analysis of the conductance drift behavior in resistive random access memories (RRAM) whose physics is based on valence change mechanisms. We experimentally characterize the conductance time evolution in six different resistance states and analyze the suitability of various probability distributions to model the observed variability. Our results reveal that the log-logistic probability distribution provides the best fit to the experimental data for the resistance multilevels and the measured post-programming times under consideration. Additionally, we employ an analysis of variance (ANOVA) to statistically analyze the post-programming time and current level effects on the observed variability. Finally, in the context of the Stanford compact model, we describe how variability has to be implemented to obtain the probability distribution of measured current values.
Authors
- Andrea Baroni (ORCID: https://orcid.org/0000-0002-5205-0398)
- J.B. Roldán (ORCID: https://orcid.org/0000-0003-1662-6457)
- Eduardo Pérez (ORCID: https://orcid.org/0000-0001-7545-9420)
- Keerthi Dorai Swamy Reddy (ORCID: https://orcid.org/0000-0001-5260-7929)
- H. D. Ortiz (ORCID: https://orcid.org/0000-0002-9967-7024)
- D. Maldonado (ORCID: https://orcid.org/0000-0002-3475-9440)
- Stefan Pechmann (ORCID: https://orcid.org/0000-0001-6890-3378)
- Christian Wenger (ORCID: https://orcid.org/0000-0003-3698-2635)
- Christian Acal (ORCID: https://orcid.org/0000-0002-2636-5396)
- Ana M. Aguilera
- M. Uhlmann
- A. Cantudo (ORCID: https://orcid.org/0009-0001-6973-7890)
- Juan Eloy Ruiz‐Castro (ORCID: https://orcid.org/0000-0001-7747-8297)
Institutions
- Universidad de Granada (ES)
- Universidad Rey Juan Carlos (ES)
- Brandenburg University of Technology Cottbus-Senftenberg (DE)
- Technical University of Munich (DE)
- Leibniz Institute for High Performance Microelectronics (DE)
Publication Details
- Journal
- Materials Science in Semiconductor Processing
- Published
- 2025-05-14
- DOI
- https://doi.org/10.1016/j.mssp.2025.109668
- Citations
- 3
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- European Commission
- Deutsche Forschungsgemeinschaft
- Ministerio de Ciencia e Innovación
- European Regional Development Fund