A 300 GHz High-Pass Distributed Amplifier using a Quasi High-Pass Transmission Line Topology
This paper presents a H-band high-pass distributed amplifier consisting of two cascaded amplifiers, which is used as pre-amplifier to drive subsequent high-power amplifier. The first stage is a high-pass distributed amplifier with four parallel gain cells as driver amplifier. The second stage consists of two parallel high-pass distributed amplifiers, connected using a Wilkinson power dividers. Both stages use RF-grounded shunt stubs at gate- and drain-line in order to design high-pass artificial transmission lines. A 3-dB-bandwidth of more than 80 GHz is achieved with a maximum gain of up to 15 dB and a saturated output power of 3 dBm. The maximum measured power added efficiency exceeds 4.5 %. The amplifier is fabricated in a 35 nm InGaAs mHEMT technology.
Authors
- Benjamin Schoch (ORCID: https://orcid.org/0000-0003-1380-4174)
- Dominik Wrana (ORCID: https://orcid.org/0000-0002-8282-9060)
- Simon Haußmann (ORCID: https://orcid.org/0009-0009-7882-584X)
- Lukas Gebert (ORCID: https://orcid.org/0009-0009-4658-5941)
- Axel Tessmann
- Ingmar Kallfass (ORCID: https://orcid.org/0000-0001-6006-3124)
- Thomas Ufschlag (ORCID: https://orcid.org/0009-0003-5808-3865)
Institutions
- University of Stuttgart (DE)
- Fraunhofer Institute for Applied Solid State Physics (DE)
Publication Details
- Published
- 2025-03-17
- DOI
- https://doi.org/10.23919/gemic64734.2025.10979090
- Primary Topic
- Microwave Engineering and Waveguides
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education