PIN Diode-Based Frequency Doubler for D-Band Applications

This paper explores the potential of pin-diode-like structures for frequency multiplication, focused on doubling, in a well-established commercial SiGe BiCMOS technology. These devices can be manufactured without additional costs by omitting the characteristic implant of the junction varactor layout. Measurement results confirm a pronounced step recovery behavior and the usability of these structures for frequency doubling. A VCO implementation operating around 130 GHz with an output power up to 0 dBm successfully demonstrates the efficient doubling of a fundamental frequency into the D-band.

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Published
2025-03-17
DOI
https://doi.org/10.23919/gemic64734.2025.10979143
Primary Topic
Microwave Engineering and Waveguides
Type
article
Field-Weighted Citation Impact
0.00

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article

PIN Diode-Based Frequency Doubler for D-Band Applications

Nils Pohl, H. Knapp, Isabel Kraus
Microwave Engineering and Waveguides
article

PIN Diode-Based Frequency Doubler for D-Band Applications

Nils Pohl, H. Knapp, Isabel Kraus
article en

Abstract

This paper explores the potential of pin-diode-like structures for frequency multiplication, focused on doubling, in a well-established commercial SiGe BiCMOS technology. These devices can be manufactured without additional costs by omitting the characteristic implant of the junction varactor layout. Measurement results confirm a pronounced step recovery behavior and the usability of these structures for frequency doubling. A VCO implementation operating around 130 GHz with an output power up to 0 dBm successfully demonstrates the efficient doubling of a fundamental frequency into the D-band.

Infineon Technologies (Germany) (DE), Ruhr University Bochum (DE)
Ministry of Education
Affordable and clean energy
Openalex Percentile: Top 92%
Microwave Engineering and Waveguides
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