PIN Diode-Based Frequency Doubler for D-Band Applications
This paper explores the potential of pin-diode-like structures for frequency multiplication, focused on doubling, in a well-established commercial SiGe BiCMOS technology. These devices can be manufactured without additional costs by omitting the characteristic implant of the junction varactor layout. Measurement results confirm a pronounced step recovery behavior and the usability of these structures for frequency doubling. A VCO implementation operating around 130 GHz with an output power up to 0 dBm successfully demonstrates the efficient doubling of a fundamental frequency into the D-band.
Authors
- Nils Pohl (ORCID: https://orcid.org/0000-0001-5362-638X)
- H. Knapp (ORCID: https://orcid.org/0000-0001-8260-0023)
- Isabel Kraus (ORCID: https://orcid.org/0009-0002-5861-3435)
Institutions
- Infineon Technologies (Germany) (DE)
- Ruhr University Bochum (DE)
Publication Details
- Published
- 2025-03-17
- DOI
- https://doi.org/10.23919/gemic64734.2025.10979143
- Primary Topic
- Microwave Engineering and Waveguides
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education