A Low Phase-Noise Ka-band GHz VCO in 22 nm FDSOI CMOS for 6G Applications

In this paper, we present a voltage-controlled oscillator (VCO) in 22 nm FDSOI CMOS technology for 6G wireless data communication systems. The VCO operates around a fundamental center frequency of 28.8 GHz. Additionally, it features the possibility to extract the second harmonic from the tail of the cross-coupled pair. The circuit draws 39 mA from a single 800 mV DC supply. A very low phase noise of -104.3 dBc/Hz at 1 MHz carrier offset was measured at a frequency of 28.54 GHz. The output power measured on a 50 Ω load impedance is -5.5 dBm.

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Published
2025-03-17
DOI
https://doi.org/10.23919/gemic64734.2025.10979128
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A Low Phase-Noise Ka-band GHz VCO in 22 nm FDSOI CMOS for 6G Applications

Meghana Kadam, Вадим Іссаков
Radio Frequency Integrated Circuit Design
article

A Low Phase-Noise Ka-band GHz VCO in 22 nm FDSOI CMOS for 6G Applications

Meghana Kadam, Вадим Іссаков
article en

Abstract

In this paper, we present a voltage-controlled oscillator (VCO) in 22 nm FDSOI CMOS technology for 6G wireless data communication systems. The VCO operates around a fundamental center frequency of 28.8 GHz. Additionally, it features the possibility to extract the second harmonic from the tail of the cross-coupled pair. The circuit draws 39 mA from a single 800 mV DC supply. A very low phase noise of -104.3 dBc/Hz at 1 MHz carrier offset was measured at a frequency of 28.54 GHz. The output power measured on a 50 Ω load impedance is -5.5 dBm.

Technische Universität Braunschweig (DE)
Ministry of Education
Affordable and clean energy
Openalex Percentile: Top 92%
Radio Frequency Integrated Circuit Design
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