GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE

We report on a GaN power HEMT with a breakdown voltage exceeding 800 V, grown by MBE on sapphire. The high breakdown voltage, surpassing 800 V, is achieved through the use of an ultra-thin AlN buffer layer grown by MBE and the implementation of a single-level gate field plate technique. The MBE technique facilitates the growth of a dopant-free buffer layer and pseudomorphic epilayers, which is advantageous for the high reliability of GaN power HEMTs. Additionally, the single-level gate field plate technique aids in reducing the overall fabrication cost and also enhances the reliability of GaN power HEMTs. These merits highlight the potential of the reported GaN power HEMT for applications in high-power electronics.