Frequency Analysis of Nanotube Junction-Less Double-Gate All Around (NJL-DGAA) Mosfets

This paper compares various performance metrics for three types of channel material for a nanotube junction-less double gate all around MOSFET. GaN-based NJL-DGAA MOSFET, SiC-based NJL-DGAA MOSFET, and Silicon-based NJL-DGAA MOSFET were compared with each other. It was observed that GaN-based NJL-DGAA MOSFET showed better performance metrics when compared with SiC-based NJL-DGAA MOSFET and Silicon-based NJL-DGAA MOSFET. Better analogous behavior in terms of improved drain current, improved transconductance, and improved transconductance generation factor for GaN were seen. Channel resistance was minimum in GaN when compared to other materials. The output conductance and cut-off frequency were also higher making GaN superior to withstand higher voltages and higher frequencies.