Reduced Hysteresis and Low-Frequency 1/f Noise in Metal Insulator Graphene Diodes for RF & THz Rectification

In this paper, we discuss the reduction in hysteresis and low-frequency 1/f noise observed by changing the barrier insulator layer in Metal-Insulator-Graphene (MIG) diodes. We observed five orders of magnitude reduction in hysteresis and two orders of magnitude reduction in 1/f noise at low frequencies when zinc oxide (ZnO) is used as barrier layer in these diodes, while the previously reported MIG diodes based on titanium oxide (TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>) as barrier layer suffer from large hysteresis, large current drifts and high 1/f noise. This study is a comparison of these key parameters which play an important role in the application of these diodes in THz detection.