GaN-Based Single-Ended Resistive Mixer for V-Band (50-70 GHz) Applications

This work presents the first implementation of a down-converting MMIC mixer in a 100 nm AlGaN/GaN HEMT technology designed to operate in the V-band (50 - 70 GHz). A resistive topology is used for higher linearity and smaller footprint. The proposed MMIC mixer occupies an area of 3 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. Further, it features a conversion gain better than -8 dB, and an isolation greater than 12 dB between the LO and RF ports. The input power-related -1 dB compression point is 15 dBm at an input LO power of 20 dBm. The proposed mixer demonstrates over 30 % of input RF bandwidth in the V-band and almost 2.5 GHz of IF output bandwidth. Additionally, the MMIC consumes no power due to its resistive nature.