530GHz f<sub>max</sub> 90nm SiGe BiCMOS Technology for Sensing and Communication Applications
This paper reports on Infineon's next generation SiGe BiCMOS technology B12HFC featuring a SiGe HBT with 530GHz maximum oscillation frequency integrated in a 90nm CMOS platform. Electrical high-frequency parameters are shown including uniformity within wafer and lot to lot variation. The features of the process design kit which enables circuit development are described. Results on reliability tests for the new technology are given and the electrical performance of demonstrator circuits for mm-wave applications is presented.
Authors
- Steffen Rothenhäußer
- J. Böck
- Vladislav Komenko
- D. Tschumakow
- A. Mukherjee
- H.-D. Wohlmuth
- Klaus Aufinger (ORCID: https://orcid.org/0000-0002-7884-7987)
- M. Stavrev
- H. Knapp (ORCID: https://orcid.org/0000-0001-8260-0023)
Institutions
- Infineon Technologies (Germany) (DE)
Publication Details
- Published
- 2025-03-17
- DOI
- https://doi.org/10.23919/gemic64734.2025.10979048
- Citations
- 1
- Primary Topic
- Advanced Wireless Communication Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73