A V-band Power Amplifier in 22-nm FD-SOI Supporting Instantaneous Broadband Data Transmission at 20 Gb/s

This paper presents a V-band power amplifier (PA) designed in 22-nm FD-SOI technology, employing a transformer-based current-combining technique for emerging 5G/B5G and satellite communication applications. Operating with a low supply voltage of 0.8V, the fabricated PA delivers a gain of 21.4dB and a 3-dB bandwidth of 20.7GHz. Under large-signal conditions, the PA achieves a saturated output power exceeding 16.5dBm and a peak power-added efficiency (PAE) of over 20.9% across 42 to 58GHz. Additionally, the PA supports broadband modulation signals up to 4GBd, achieving an instantaneous data rate of 20Gb/s with 32-APSK modulation; at 50GHz, the PA demonstrates state-of-the-art performance with 12.3 dBm average output power, 9.3% drain efficiency, at an EVM level of -16.2dB.