A Comparative analysis of Electrical Characteristics in Bulk, PD, FD and Optimized SOI MOSFETs

This paper presents a comparative analysis of the performance of various MOSFET structures, including Bulk MOSFET, Partially Depleted Silicon-On-Insulator (PD-SOI), Fully Depleted Silicon-On-Insulator (FD-SOI), and Insulator-Modified SOI structures. The optimization of the SOI structures involves modifying the insulator layer below the silicon using high dielectric materials such as HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, Si<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>, and Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>. The study focuses on key performance parameters including threshold voltage (Vt), subthreshold slope, leakage current, Ion, Ioff, and the Ion/Ioff ratio. Using Silvaco © ATLAS TCAD Software, we systematically assess these parameters across all configurations. Preliminary findings indicate out of all mosfet architectures FD SOI MOSFET with HfO₂ exhibit the best results with a 55.9% lower Vth and a 32.7% improved SS compared to Bulk MOSFETs.