SiGe BiCMOS Wafer-level Packaging and Antenna Integration for sub-THz Applications

This paper demonstrates BiCMOS wafer-level packaging and antenna integration technologies using an advanced Al-Al bonding process. A silicon interposer wafer-level packaging platform is demonstrated using a C2W Al-Al bonding process of a BiCMOS and an interposer test chip. It enables low ohmic interconnections with a bond pad resistance <30 mΩ which enables ultra-wideband low-loss interconnections based on W2W and C2W Al-Al bonding interconnections. The realized silicon interposer technology is extended with embedded dielectric resonant antennas providing a versatile high performance antenna-in-package integration platform for BiCMOS sub-THz communication, radar and imaging applications.