A Differential Ka-Band PA with Transformer Matching in 250 nm SiGe BiCMOS
In this paper the design of a fully differential Ka-Band power amplifier (PA) with transformer based impedance matching is presented. The PA is realized in a 250 nm SiGe BiCMOS process. At a target frequency of 28 GHz a maximum output power of 20.8 dBm and a PAE of 28.8 % are achieved demonstrating very high efficiency compared to implementations in similar technologies in the literature.
Authors
- Ahmet Çağrı Ulusoy (ORCID: https://orcid.org/0000-0001-5718-2827)
- Kaan Balaban (ORCID: https://orcid.org/0009-0000-4573-2465)
- Benjamin Sandrock
Institutions
- Karlsruhe Institute of Technology (DE)
- Robert Bosch (Germany) (DE)
Publication Details
- Published
- 2025-03-17
- DOI
- https://doi.org/10.23919/gemic64734.2025.10979012
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00