Investigations on the dissolution behavior of silicon in aqueous HF-HClO <sub>4</sub> -mixtures

Wet chemical etching processes are an essential part of silicon treatment in the photovoltaic and semiconductor industry. A commonly used system is HF-HNO<sub>3</sub>. In order to avoid NO <sub><i>x</i></sub> -formation, silicon can also be etched with HF-(HCl)-Cl<sub>2</sub>-mixtures. Thorough investigations into perchloric acid indicate that even Si-H terminated surfaces are inert against this very strong oxidizing agent.

Authors

N. Schubert (ORCID: https://orcid.org/0009-0001-2661-8218)
Edwin Kroke (ORCID: https://orcid.org/0000-0002-7934-6439)
André Stapf (ORCID: https://orcid.org/0000-0003-3920-2809)
Niklas Zomack (ORCID: https://orcid.org/0009-0002-2146-5491)
Ann‐Lucia Neumann (ORCID: https://orcid.org/0009-0002-6462-6339)

Institutions

TU Bergakademie Freiberg (DE)

Publication Details

Journal: RSC Advances
Published: 2025-01-01
DOI: https://doi.org/10.1039/d5ra00859j
Citations: 4
Primary Topic: Semiconductor materials and devices
Type: article
Field-Weighted Citation Impact: 2.92

Funders

Deutsche Forschungsgemeinschaft

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article

Investigations on the dissolution behavior of silicon in aqueous HF-HClO ₄ -mixtures

N. Schubert, Edwin Kroke, André Stapf, Niklas Zomack et al.

Jan 1, 2025

4 citations

RSC Advances

Semiconductor materials and devices

2.92

article

Investigations on the dissolution behavior of silicon in aqueous HF-HClO ₄ -mixtures

N. Schubert, Edwin Kroke, André Stapf, Niklas Zomack, Ann‐Lucia Neumann

January 1, 2025article en

4 citations

Abstract

Wet chemical etching processes are an essential part of silicon treatment in the photovoltaic and semiconductor industry. A commonly used system is HF-HNO<sub>3</sub>. In order to avoid NO <sub><i>x</i></sub> -formation, silicon can also be etched with HF-(HCl)-Cl<sub>2</sub>-mixtures. Thorough investigations into perchloric acid indicate that even Si-H terminated surfaces are inert against this very strong oxidizing agent.

RSC AdvancesVol. 15(20)

TU Bergakademie Freiberg (DE)

Deutsche Forschungsgemeinschaft

Clean water and sanitation

Openalex Percentile: Top 9%

Semiconductor materials and devices

2.92

DOI Open Access PDF OpenAlex

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Investigations on the dissolution behavior of silicon in aqueous HF-HClO <sub>4</sub> -mixtures — N. Schubert, Edwin Kroke, et al. · RSC Advances (2025) | TGRS Research Map | TGRS