High Bandwidth All Silicon 3nm-MOSCAP Ring Modulators
We demonstrate a 3 nm t<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> MOSCAP ring achieving a BER <1×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−12</sup> up to 50 Gbps and an open eye at 100 Gbps. A 3 dB ER is achieved with 1.5 dB IL<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">one</inf> or 1 V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</inf>.
Authors
- David J. Thomson (ORCID: https://orcid.org/0000-0002-1838-2663)
- Xingzhao Yan (ORCID: https://orcid.org/0000-0002-2466-3015)
- Graham T. Reed (ORCID: https://orcid.org/0009-0002-5314-6604)
- Mehdi Banakar (ORCID: https://orcid.org/0000-0002-9179-252X)
- Callum G. Littlejohns (ORCID: https://orcid.org/0000-0002-7101-0447)
- Weiwei Zhang (ORCID: https://orcid.org/0000-0002-1086-5775)
- Tzu Yun Chang
- M.-O. Ebert
Institutions
- University of Southampton (GB)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10984589
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Royal Society