Membrane InGaAlAs Electro-Absorption Modulator Integrated with III-V/Si DFB Laser with 150-Gbaud Modulation on Si Photonics Platform
We fabricate an O-band membrane InGaAlAs electro-absorption modulator (EAM) integrated with a III-V/Si DFB laser on a Si photonics platform. The device exhibits 6-mW fibre-coupled output power through the EAM and over 67-GHz EO bandwidth. Clear eye-opening with a 150-Gbaud NRZ signal is also achieved.
Authors
- Takuma Aihara (ORCID: https://orcid.org/0000-0002-8501-5716)
- Tatsurou Hiraki (ORCID: https://orcid.org/0000-0002-4306-4106)
- Koji Takeda (ORCID: https://orcid.org/0000-0003-4941-1655)
- Takuro Fujii (ORCID: https://orcid.org/0000-0002-8926-3979)
- Yoshiho Maeda (ORCID: https://orcid.org/0000-0003-1765-0109)
- Shinji Matsuo
- Tomonari Sato
Institutions
- NTT (Japan) (JP)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10984878
- Citations
- 2
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- New Energy and Industrial Technology Development Organization