A 25-Gbaud 4-Lane Fully-Integrated CMOS Optical Receiver IC Array

This paper describes a 25-Gbaud 4-lane fully-integrated CMOS optical receiver array with NRZ and PAM4 signaling. The receiver is fabricated in a 90-nm CMOS silicon-on-insulator (SOI) process, and it includes inverter-based single-ended transimpedance amplifier, limiting amplifier, and on-chip photodetector. The receiver array consumes only 10-mA per lane at a 1-V single supply and achieves 3-dB bandwidth of 16.5GHz by using cascaded amplifiers with transconductance and transimpedance combinations. The integrated receiver is measured and analyzed with electrical and optical probes, and it achieves -4.5dBm of optical sensitivity for 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> BER at 25-Gbaud symbol rates for NRZ and PAM4 signals.