Fowler-Nordheim stress-induced degradation in n-channel MOSFETs

This study investigates the degradation mechanisms of gate oxide in n-channel MOSFETs subjected to Fowler-Nordheim constant current stress to introduce uniformly distributed defects. Different techniques were used to characterise the impact of stress-induced defects on the electrical properties of MOSFETs. The findings reveal distinct degradation behaviors, with early-stage negative shifts in threshold voltage attributed to hole trapping, transitioning to positive shifts due to interface state generation at higher electron fluence. The study also emphasises the factors that influence device performance. The results enhance our understanding of gate oxide reliability under high-field stress, as well as the mechanisms of defect creation and charge trapping in MOSFETs.