Extraction of Recombination Coefficients for Electrically Injected InGaAs/GaAs Monolithic Nano-ridge Laser Diodes Integrated on Silicon
We present the extraction of recombination coefficients for electrically injected monolithic nano-ridge laser diodes by first determining the effective carrier capture time from the small signal modulation response. The effect of the nano-ridge box size on the recombination coefficients is investigated.
Authors
- Dries Van Thourhout (ORCID: https://orcid.org/0000-0003-0111-431X)
- Marina Baryshnikova (ORCID: https://orcid.org/0000-0002-5945-4459)
- Charles Caër (ORCID: https://orcid.org/0000-0002-2735-2423)
- Geert Morthier (ORCID: https://orcid.org/0000-0003-1819-6489)
- Yannick De Koninck
- Davide Colucci (ORCID: https://orcid.org/0000-0001-9845-8965)
- Peter Verheyen
- Bernardette Kunert (ORCID: https://orcid.org/0000-0002-8986-4109)
- Didit Yudistira (ORCID: https://orcid.org/0000-0003-1440-5407)
- Hüseyin Şar (ORCID: https://orcid.org/0000-0002-4993-1258)
- Joris Van Campenhout (ORCID: https://orcid.org/0000-0003-0778-2669)
- Andualem Yimam
Institutions
- Ghent University (BE)
- IMEC (BE)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10985704
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00