Low loss PVD SiN waveguides with 300mm wafer size

We present a photonic platform based on Physical Vapor Deposition (PVD) SiN at 300mm wafer size. C-Band (1550nm) propagation losses obtained for low deposition temperature of SiN (200°C) were down to 0.30dB/cm and 0.13dB/cm after annealing at 800°C. Low propagation losses were obtained as well for O-band (1310nm) and around 900nm wavelength. Those results, highlight the interest of PVD SiN for industrial scale photonic applications when a low temperature budget integration is needed with no compromise on performances.

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Published
2025-04-14
DOI
https://doi.org/10.1109/siphotonics64386.2025.10985021
Primary Topic
Photonic and Optical Devices
Type
article
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Low loss PVD SiN waveguides with 300mm wafer size

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Photonic and Optical Devices
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Low loss PVD SiN waveguides with 300mm wafer size

Karen Ribaud, Eleonora Garoni, Nicolas Dunoyer, Laura C. Sauze, Benjamin Dey, Lavinia Nistor, Guillaume Rodriguez, Quentin Wilmart, Taha Vollaire
article en

Abstract

We present a photonic platform based on Physical Vapor Deposition (PVD) SiN at 300mm wafer size. C-Band (1550nm) propagation losses obtained for low deposition temperature of SiN (200°C) were down to 0.30dB/cm and 0.13dB/cm after annealing at 800°C. Low propagation losses were obtained as well for O-band (1310nm) and around 900nm wavelength. Those results, highlight the interest of PVD SiN for industrial scale photonic applications when a low temperature budget integration is needed with no compromise on performances.

Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Grenoble Alpes (FR)
Affordable and clean energy
Openalex Percentile: Top 92%
Photonic and Optical Devices
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