Mode-evolution based polarization rotator with adiabatic vertical transition between SiN and Si layers
We propose a polarization rotator with vertical mode transition between silicon nitride and silicon layers for the C-band spectrum. The device is fabricated with standard processes of a commercial foundry, and exhibits an average polarization extinction ratio of 20dB over the C-band.
Authors
- Keiji Tanaka (ORCID: https://orcid.org/0000-0003-0314-3843)
- Akira Fujisawa (ORCID: https://orcid.org/0009-0005-1914-3516)
- Katsumi Uesaka
- Hiroshi Uemura
- Yoshiyuki Sugimoto
Institutions
- Sumitomo Electric Industries (Japan) (JP)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10985102
- Primary Topic
- Advanced Fiber Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00