Aspect Ratio Trapping based Selective Ge growth under Ultra High Vacuum Chemical Vapor Deposition conditions
In this work, high-quality Ge film was selectively grown on a Si substrate using digermane under ultra-high vacuum chemical vapor deposition conditions. A low-defect-density film was achieved via aspect ratio trapping, with most dislocations confined within the silicon dioxide trenches.
Authors
- Chunlai Xue (ORCID: https://orcid.org/0000-0001-7816-1873)
- Fenghe Fu
- Chi Xu (ORCID: https://orcid.org/0000-0002-0237-0254)
- Yue Li (ORCID: https://orcid.org/0000-0002-3794-8976)
- Guoyin Xu (ORCID: https://orcid.org/0000-0003-0454-3320)
- Hui Cong
- Zhengjie Wu
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10985067
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences