Silicon-rich Silicon Nitride on Lithium Niobate thin film modulators with 100 GHz Electro-Optical bandwidth in the C-band
We report silicon-rich silicon nitride on lithium niobate Mach-Zehnder modulators, achieving an efficiency of 2.9 V.cm, insertion losses of 1.8 dB and an electro-optical cut-off frequency as large as 100 GHz at a wavelength of 1550 nm.
Authors
- Carlos Alonso‐Ramos (ORCID: https://orcid.org/0000-0002-4445-5651)
- Ali Belarouci (ORCID: https://orcid.org/0000-0002-9818-5976)
- Philippe Grosse
- Yohan Désières (ORCID: https://orcid.org/0000-0001-7255-2208)
- Laurent Vivien (ORCID: https://orcid.org/0000-0002-2980-7225)
- Clément Ben Braham
- Régis Orobtchouk (ORCID: https://orcid.org/0000-0002-6209-3017)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Institut des Nanotechnologies de Lyon (FR)
- CEA Grenoble (FR)
- Centre de Nanosciences et de Nanotechnologies (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Institut National des Sciences Appliquées de Lyon (FR)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10985475
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00