Low threshold InAs/InP quantum dot lasers on Si

We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.

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Publication Details

Published
2025-04-14
DOI
https://doi.org/10.1109/siphotonics64386.2025.10984482
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.25

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article

Low threshold InAs/InP quantum dot lasers on Si

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1 citations
Semiconductor Quantum Structures and Devices
1.25
article

Low threshold InAs/InP quantum dot lasers on Si

T. Baron, Jiajing Yuan, Huiwen Deng, A.J. Seeds, Hui Jia, M. Martin, Mingchu Tang, Huiyun Liu, Shangfeng Liu, Haotian Zeng, Yangqian Wang, Calum Dear, Jae‐Seong Park, Chong Chen, Qiang Li, Jun Li
article en
1 citations

Abstract

We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.

Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), University College London (GB), Cardiff University (GB), Université Grenoble Alpes (FR)
Engineering and Physical Sciences Research Council
Affordable and clean energy
Openalex Percentile: Top 21%
Semiconductor Quantum Structures and Devices
1.25
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