Implementation of a Pulse Method for Determining the Parameters of a Low-Signal Equivalent Circuit of Semiconductor Devices

The paper demonstrates the implementation of a pulse method for estimating the parameters of small-signal circuits of semiconductor devices at moderately high frequencies. The theoretical foundations of the method were described, computer modeling was carried out. A mock-up has been assembled for a low-frequency bipolar transistor, the experimental study of which confirmed the theoretical analysis. The results of the work have been successfully implemented in the educational process in the form of laboratory work, which makes it possible to study the properties of a bipolar transistor.