InGaAs/GaAs Nano-Ridge Laser Based on Bound States in the Continuum Epitaxially Grown on a Si Wafer

We demonstrate a novel vertically emitting nano-ridge laser epitaxially grown on a 300-mm silicon wafer. By leveraging the concept of bound states in the continuum (BICs), we achieve confined optical modes with high Q-factors within the structure. We experimentally show low threshold lasing (10 kW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>).