Demonstration of High Responsivity, Low Dark Current Ge/Si Avalanche Photodiode using Silicon Photonics Foundry Process with Zero Change
We demonstrated Ge/Si avalanche photodiodes compatible with standard silicon photonics foundry process without any modifications, showing responsivity > 7.5 A/W at < -20 V operation and low dark currents of 1.4 nA for 3 A/W responsivity near breakdown suitable for optical networking applications.
Authors
- Leh Woon Lim (ORCID: https://orcid.org/0000-0002-8039-5406)
- Yiding Lin (ORCID: https://orcid.org/0000-0002-9854-2072)
- Md Hazwani Khairy Md Husni
- Landobasa Y. M. Tobing (ORCID: https://orcid.org/0000-0002-3113-1252)
- Xianshu Luo (ORCID: https://orcid.org/0000-0002-5531-5689)
- Bo Li (ORCID: https://orcid.org/0009-0006-2058-5474)
Institutions
- Agency for Science, Technology and Research (SG)
- Institute of Microelectronics (SG)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10985253
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00